| PART |
Description |
Maker |
| BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit
|
Brilliance Semiconductor
|
| XDUG07A2 |
Material (Color) = Gap (Green) Lens = Peak Wave Length = 565 Iv(ucd) If@10mA Min.= 1200 Iv(ucd) If@10mA Typ.= 2990
|
SunLED Company Limited
|
| XDUG14C4-A |
Material (Color) = Gap (Green) Lens = Peak Wave Length = 565 Iv(ucd) If@10mA Min.= 3000 Iv(ucd) If@10mA Typ.= 10490
|
SunLED Company Limited
|
| XDUG100A-A |
Material (Color) = Gap (Green) Lens = Peak Wave Length = 565 Iv(ucd) If@10mA Min.= 18000 Iv(ucd) If@10mA Typ.= 59990
|
SunLED Company Limited
|
| XDMR11C-A |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 17990
|
SunLED Company Limited
|
| XDMR10C-A |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 17990
|
SunLED Company Limited
|
| XDMR14A2 |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 23990
|
SunLED Company Limited
|
| XDMR09A |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 1900 Iv(ucd) If@10mA Typ.= 6390
|
SunLED Company Limited
|
| K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D2632 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| N-150NS |
Cell Type N-150NS
|
SANYO[Sanyo Semicon Device]
|
| 2SC4710LS 0929 |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| HM-65642 |
RAM, Asynchronous CMOS, 8Kx8, Access Time 150ns, 150A
|
Intersil
|
